PART |
Description |
Maker |
LTC1262 LTC1262C LTC1262CN8 LTC1262CS8 LTC1262I LT |
12V, 30mA Flash Memory Programming Supply 12V的,30mA的闪存编程电 12V/ 30mA Flash Memory Programming Supply From old datasheet system
|
Linear Technology, Corp. LINER[Linear Technology]
|
PIC12F PIC16F |
PIC16F/LF182X/PIC12F/LF1822 Memory Programming Specification PIC16F/LF182X/PIC12F/LF1822 Memory Programming Specification
|
Microchip Technology
|
HCSXXX HCS362 HCS200 HCS201 HCS300 HCS301 HCS320 H |
Memory Programming Specification
|
MICROCHIP[Microchip Technology]
|
PIC16F874 PIC16F876 |
EEPROM Memory Programming Specification
|
Microchip Technology
|
MAX734ESA |
12,120mA Flash Memory Programming Supply
|
Maxim Integrated Products
|
ST662ABD-TR ST662ACD-TR |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
|
ST Microelectronics
|
SX28AC SX20AC100-I_DP SX20AC100-I_PQ SX20AC100-I_S |
Configurable Communications Controllers with EE/Flash Program Memory In-System Programming Capability and On-Chip Debug Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability and On-Chip Debug
|
ETC[ETC]
|
ATMEGA128 ATMEGA128L |
128-Kbyte self-programming Flash Program Memory, 4-Kbyte SRAM, 4-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 Mhz. 128-Kbyte self-programming Flash Program Memory, 4-Kbyte SRAM, 4-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation.
|
Atmel
|
ATMEGA1280 ATMEGA640 |
128-Kbyte self-programming Flash Program Memory, 8-Kbyte SRAM, 4-KByte EEPROM, 16 Channel 10-bit A/D ATmega640/1280/1281/2560/2561 Advance Information Summary
|
ATMEL
|
PHT4N10T |
12V, 30mA Flash Memory Programming Supply; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 3.5AI(四)|的SOT - 223
|
Microsemi, Corp.
|
ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http:// STMICROELECTRONICS[STMicroelectronics] 意法半导
|